1个N沟道 耐压:650V 电流:7A
- 1+： ￥3.81 / 个
- 10+： ￥3.14 / 个
- 50+： ￥2.62 / 个 （折合1管131元）
- 100+： ￥2.29 / 个 （折合1管114.5元）
- 500+： ￥2.09 / 个 （折合1管104.5元）
- 1000+： ￥1.99 / 个 （折合1管99.5元）
| 1+： |
￥3.81 / 个 |
| 10+： |
￥3.14 / 个 |
| 50+： |
￥2.62 / 个 （折合1管131元） |
| 100+： |
￥2.29 / 个 （折合1管114.5元） |
| 500+： |
￥2.09 / 个 （折合1管104.5元） |
| 1000+： |
￥1.99 / 个 （折合1管99.5元） |
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商品介绍
| 属性 | 参数值 | |
|---|---|---|
| 商品目录 | 场效应管(MOSFET) | |
| 类型 | 1个N沟道 | |
| 漏源电压(Vdss) | 650V | |
| 连续漏极电流(Id) | 7A | |
| 功率(Pd) | 28W | |
| 导通电阻(RDS(on)@Vgs,Id) | 650mΩ@10V,2.1A | |
| 阈值电压(Vgs(th)@Id) | 3.5V@210uA |
英飞凌650VCoolMOS，10N65，Id=7A，7A650V
国际一流品牌，工业级品质，国货价格，上市公司首选CoolMOS。
以下为该元器件的简介：
MOSFET
650V CoolMOS? CE Power Transistor
CoolMOS? is a revolutionary technology for high voltage power
MOSFETs,designed according to the super junction(SJ) principle and
pioneered by Infineon Technologies.CoolMOS? CE is a
price-performance optimized platform enabling to target cost sensitive
applications in Consumer and Lighting markets by still meeting highest
efficiency standards.The new series provides all benefits of a fast
switching Super junction MOSFET while not sacrificing ease of use and
offering the best cost down performance ratio available on the market.
Features
Extremely low losses due to very low FOM Rdson*Qg and Eoss
Very high commutation ruggedness
Easy to use/drive
Pb-free plating,Halogen free mold compound
Qualified for standard grade applications
Applications
PFC stages,hards witching PWM stages and resonant switching stages
for e.g. PC Silverbox, Adapter,LCD&PDP TV and indoor lighting.
Pleasenote:For MOSFET paralleling the use of ferrite beads on the gate
or separate totem poles is generally recommended.
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